FDS9934C
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS9934C
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:2 2 W 20 V Continuous Drain Current (ID):6.5 A 9 nC, 12 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 3.9 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 30 mΩ |
| Height | 1.575 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 6.5 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 650 pF |
| Continuous Drain Current (ID) | 6.5 A |
| Rds On Max | 30 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 25 ns |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 9 nC, 12 nC |
| Drain to Source Resistance | 25 mΩ |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 600 mV, 1.2 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
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